Femtosecond laser direct writing of nanoscale silicon lines

James I. Mitchell; Se Jun Park; C. Adam Watson; Pornsak Srisungsitthisunti; Chookiat Tansarawiput; Minghao Qi; E. A. Stach; Chen Yang; Xianfan Xu

doi:10.1117/12.859729

27 August 2010 Femtosecond laser direct writing of nanoscale silicon lines

James I. Mitchell, Se Jun Park, C. Adam Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, E. A. Stach, Chen Yang, Xianfan Xu

Author Affiliations +

Proceedings Volume 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII; 77640E (2010) https://doi.org/10.1117/12.859729
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Direct writing using a femtosecond laser provides an accurate, repeatable and efficient means of creating nanoscale lines for electronic applications circumventing the standard fabrication methods that require expensive masks and numerous processing steps. Femtosecond laser writing makes these nanoscale lines by using a phase zone plate to focus the laser pulse onto a silicon substrate in a chemical vapor deposition chamber flowing silane. The silane is decomposed onto the narrow heated area of the substrate as the laser scans across leaving behind a thin line of silicon deposition. This manufacturing technique utilizes a high precision optical metrology system and a high precision motion control system to make this nanomanufacturing possible. It has been shown to successfully make as many as 100 silicon lines on the order of a few hundred nanometers in width. The size and crystal structure of these lines are characterized using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM).

Citation Download Citation

James I. Mitchell, Se Jun Park, C. Adam Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, E. A. Stach, Chen Yang, and Xianfan Xu "Femtosecond laser direct writing of nanoscale silicon lines", Proc. SPIE 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII, 77640E (27 August 2010); https://doi.org/10.1117/12.859729

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available