A fully-integrated W-band imaging receiver IC in silicon-germanium BiCMOS technology

Leland Gilreath; Vipul Jain; Hsin-Cheng Yao; Le Zheng; Payam Heydari

doi:10.1117/12.851263

27 April 2010 A fully-integrated W-band imaging receiver IC in silicon-germanium BiCMOS technology

Leland Gilreath, Vipul Jain, Hsin-Cheng Yao, Le Zheng, Payam Heydari

Proceedings Volume 7670, Passive Millimeter-Wave Imaging Technology XIII; 76700N (2010) https://doi.org/10.1117/12.851263
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-μm SiGe BiCMOS technology (f_T/f_MAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. Initial imaging measurements using the chip along with off-chip antennas are also presented. The imager chip consumes 200 mW from a single 1.8-V power supply.

Citation Download Citation

Leland Gilreath, Vipul Jain, Hsin-Cheng Yao, Le Zheng, and Payam Heydari "A fully-integrated W-band imaging receiver IC in silicon-germanium BiCMOS technology", Proc. SPIE 7670, Passive Millimeter-Wave Imaging Technology XIII, 76700N (27 April 2010); https://doi.org/10.1117/12.851263

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