Performance limits of room-temperature InAsSb photodiodes

J. Wróbel; R. Ciupa; A. Rogalski

doi:10.1117/12.855196

3 May 2010 Performance limits of room-temperature InAsSb photodiodes

J. Wróbel, R. Ciupa, A. Rogalski

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 766033 (2010) https://doi.org/10.1117/12.855196
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R₀A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature.

Citation Download Citation

J. Wróbel, R. Ciupa, and A. Rogalski "Performance limits of room-temperature InAsSb photodiodes", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766033 (3 May 2010); https://doi.org/10.1117/12.855196

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