Paper
22 October 2010 Infrared activity of crystalline silicon and amorphous silicon
Shuang Liu, Wei Chen, Jianing Zhang, Wan Zhou, Pu Zeng
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Abstract
The thermo-resistance effect in silicon has been exploited for the fabrication of uncooled infrared detectors. In this paper, based on the Schrodinger equation of material radiation system and the micro-structure of silicon, the infrared absorption theory of silicon is analyzed. The results show that the infrared activity of amorphous silicon is more activate than crystalline silicon because of the fault and long range disorder, and using the impurity B, Li, and H, the infrared activity of silicon also will be activated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuang Liu, Wei Chen, Jianing Zhang, Wan Zhou, and Pu Zeng "Infrared activity of crystalline silicon and amorphous silicon", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765831 (22 October 2010); https://doi.org/10.1117/12.865943
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KEYWORDS
Absorption

Silicon

Infrared radiation

Amorphous silicon

Crystals

Crystallography

Lithium

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