Modeling of CD and placement error in multi-spacer patterning technology

S. Babin; K. Bay

doi:10.1117/12.850972

3 March 2010 Modeling of CD and placement error in multi-spacer patterning technology

S. Babin, K. Bay

Proceedings Volume 7640, Optical Microlithography XXIII; 764021 (2010) https://doi.org/10.1117/12.850972
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The spacer patterning technique is an attractive way to fabricate patterns at resolutions far beyond the limits of traditional optical lithography. In this paper, we have simulated film deposition and dry etch in spacer patterning at 32 nm and 22 nm designs using the commercially available TRAVIT software. Various resist thicknesses and profiles were used, as well as process conditions for film deposition and dry etch. Dynamics of etch profiles, resulting profiles, and critical dimensions (CDs) were extracted, as well as positional errors of features. It was found that the placement error can be significant, especially when using thin resists. Multi-spacer patterning was also simulated. In the multispacer technique, the spacer patterning processes were applied consequently, resulting in the reduction of the lithographic pitch. The fabrication of 11 nm half-pitch lines were simulated using available lithographic techniques at 45 nm.

Citation Download Citation

S. Babin and K. Bay "Modeling of CD and placement error in multi-spacer patterning technology", Proc. SPIE 7640, Optical Microlithography XXIII, 764021 (3 March 2010); https://doi.org/10.1117/12.850972

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