Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis

Vassilios Constantoudis; George P. Patsis; Evangelos Gogolides

doi:10.1117/12.848580

30 March 2010 Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis

Vassilios Constantoudis, George P. Patsis, Evangelos Gogolides

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392H (2010) https://doi.org/10.1117/12.848580
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of rms roughness and correlation length is found for resists with homogeneous solubility. The scaling exponents are shown to obey the dynamical scaling hypothesis of Family-Viscek. The insertion of inhomogeneity in the solubility of resist causes much larger increase of rms roughness and anomalous scaling behaviour. Comparison with experimental results shows good agreement with the simulation predictions.

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Vassilios Constantoudis, George P. Patsis, and Evangelos Gogolides "Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392H (30 March 2010); https://doi.org/10.1117/12.848580

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KEYWORDS

Polymers

Stochastic processes

Surface roughness

Correlation function

Ionization

Polymer thin films

Line edge roughness

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