Three-dimensional mesoscale model for the simulation of LER in photoresists

Richard A. Lawson; Clifford L. Henderson

doi:10.1117/12.848415

30 March 2010 Three-dimensional mesoscale model for the simulation of LER in photoresists

Richard A. Lawson, Clifford L. Henderson

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392G (2010) https://doi.org/10.1117/12.848415
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A three-dimensional kinetic Monte Carlo model has been developed to simulate design and processing effects on the line edge roughness and patterning of photoresists. The model is capable of simulating most all of the important parameters involved in resist processing from film formation and exposure to development. It can be used to examine the effect of photoacid generator loading, photoacid diffusion, deprotection reaction, quencher loading, base diffusion, and acid/base reactions, with the flexibility to add more physics as needed. The model is able to reproduce experimentally observed trends of the effect of base loading on LER through all levels of base loading and the effect of reduced aerial image contrast on the LER of resists. It also shows good agreement with experimental results on the effect of PAG loading through around 20% PAG loading. The scaling factors for LER were also examined. It was found that the gradient in polymer protection (dP/dx) provides a very good predictor for LER in some cases, but is insufficient for other conditions when the dominant cause of LER changes such as non-uniformity along the line edge from things like PAG or polymer aggregation.

Citation Download Citation

Richard A. Lawson and Clifford L. Henderson "Three-dimensional mesoscale model for the simulation of LER in photoresists", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392G (30 March 2010); https://doi.org/10.1117/12.848415

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