Paper
1 April 2010 SI-traceable calibration of line-width roughness of 25nm NanoCD standard
V. A. Ukraintsev, M. Helvey, Y. Guan, B. P. Mikeska
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Abstract
SI-traceable critical dimension 3DAFM was used to characterize 25 nm NanoCD linewidth standard. The standard has a uniquely low linewidth roughness (LWR) and can be used as a benchmark during development of advanced patterning technologies. The following results were obtained: (a) Mean LWR for two 25 nm standards with uncertainty ±0.02 nm (0.95 CL). The LWR is below 0.7 nm (1s). (b) Distribution of LWR and linewidth (LW) at 3 line heights (20, 50 and 80% from the line top) along 3 mm segment of the standards. Variations are below 0.25 nm and 0.07 nm (1s) for LW and LWR, respectively. (c) Spatial power spectra of LWR of the standards. The NanoCD spectrum resembles reported earlier spectra of polycrystalline Si.
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V. A. Ukraintsev, M. Helvey, Y. Guan, and B. P. Mikeska "SI-traceable calibration of line-width roughness of 25nm NanoCD standard", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76383U (1 April 2010); https://doi.org/10.1117/12.858774
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KEYWORDS
Line width roughness

Calibration

Standards development

3D imaging standards

Atomic force microscopy

Very large scale integration

Lab on a chip

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