Paper
1 April 2010 From pin-point design based critical dimension metrology toward comprehensive evaluation of IC patterning integrity
Author Affiliations +
Abstract
In this paper we demonstrate the process of creating a large-area, extreme field of view (XFOV) SEM image of a critical layer of an IC product, using an array of images captured with a typical, production CD-SEM. Individual CD-SEM images, taken side-by-side over a large area were processed to create a combined extreme field of view (XFOV) image. All feature edges were identified across this XFOV image and the edges extracted, creating feature contours. The feature contours were then compared to design and simulation data, and differences identified.
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Chris Sallee, Wayne Clark, Bo Jou Lu, Vladimir Ukraintsev, and Vitali Khvatkov "From pin-point design based critical dimension metrology toward comprehensive evaluation of IC patterning integrity", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382N (1 April 2010); https://doi.org/10.1117/12.848619
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KEYWORDS
Image processing

Semiconducting wafers

Scanning electron microscopy

Imaging arrays

Feature extraction

Manufacturing

Optical lithography

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