Study of post-develop defect on typical EUV resist

Masahiko Harumoto; Kazuhito Shigemori; Akihiro Hisai; Masaya Asai; Koji Kaneyama

doi:10.1117/12.846546

22 March 2010 Study of post-develop defect on typical EUV resist

Masahiko Harumoto, Kazuhito Shigemori, Akihiro Hisai, Masaya Asai, Koji Kaneyama

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76362Z (2010) https://doi.org/10.1117/12.846546
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

This is the study report about post-develop defect on EUV resist. The resolution, sensitivity, LWR, etc. of EUV resist have been currently studied in the development phase. We have acknowledged that resist generates a lot of defects in its transition from i-line, KrF, ArF and immersion-ArF. However, those were just a couple of defect types in the transition, and they were eliminated through resist improvement. In this study, we confirmed EUV defect type using EUV exposure tool. We also evaluate defect generation using tetrabutyl- ammonium-hydroxide (TBAH) developer. We finally discuss on the difference of defect between using KrF and EUV exposure tool, furthermore difference of defect between using TMAH and TBAH developer.

Citation Download Citation

Masahiko Harumoto, Kazuhito Shigemori, Akihiro Hisai, Masaya Asai, and Koji Kaneyama "Study of post-develop defect on typical EUV resist", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362Z (22 March 2010); https://doi.org/10.1117/12.846546

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