Paper
22 March 2010 Performance of a prototype amorphous silicon active pixel sensor array using a-Se for direct x-ray conversion
M. H. Izadi, O. Tousignant, M. F. Mokam, M. Yazdandoost, N. Safavian, H. Mani, L. Laperriere, K. S. Karim
Author Affiliations +
Abstract
Active pixel sensor (APS) circuits are an alternate to passive pixel sensor (PPS) technology which, when integrated with a direct detection amorphous selenium (a-Se) photoconductor, can enable high performance, digital x-ray imaging applications such as real-time fluoroscopy due to their better signal-to-noise ratios at low dose. This paper presents experimental imaging results from a prototype 64×64 APS pixel array fabricated in a-Si technology. The prototype APS array is coated with a one millimeter thick layer of a-Se and the experimental results are evaluated using a standard radiography x-ray beam quality RQA5. The APS experimental results are compared with a standard real-time detector (FPD14) imaging array under the same x-ray beam conditions. In addition, we will theoretically examine the best achievable performance for our APS array fabricated in state-of-the-art a-Si technology and compare the results to state-of-the-art PPS panels for real-time fluoroscopy.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Izadi, O. Tousignant, M. F. Mokam, M. Yazdandoost, N. Safavian, H. Mani, L. Laperriere, and K. S. Karim "Performance of a prototype amorphous silicon active pixel sensor array using a-Se for direct x-ray conversion", Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76223V (22 March 2010); https://doi.org/10.1117/12.845528
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KEYWORDS
X-rays

Sensors

Imaging systems

Amorphous silicon

Signal to noise ratio

Prototyping

X-ray imaging

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