Development of high-speed VCSELs beyond 10 Gb/s at Emcore

Neinyi Li; Chuan Xie; Chun Lei; Wenlin Luo; Xinyu Sun; Daniel Kuchta; Clint Schow; Fuad Doany

doi:10.1117/12.845396

5 February 2010 Development of high-speed VCSELs beyond 10 Gb/s at Emcore

Neinyi Li, Chuan Xie, Chun Lei, Wenlin Luo, Xinyu Sun, Daniel Kuchta, Clint Schow, Fuad Doany

Proceedings Volume 7615, Vertical-Cavity Surface-Emitting Lasers XIV; 76150O (2010) https://doi.org/10.1117/12.845396
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We report developments at Emcore on serial 850 nm vertical-cavity surface-emitting lasers (VCSELs) operated up to 25 Gb/s. They have been designed to provide a solution not only to meet stringent 10 Gb/s IEEE and Fiber Channel specifications but also for emerging demands of 17 Gb/s Fiber Channel serial and 100 Gb/s (4x25 Gb/s or 5x20 Gb/s) parallel applications in local and storage area networks. This paper covers 10 Gb/s GenX production distributions and improved GenX VCSEL device design to meet low-power requirements at 20 Gb/s. We have successfully demonstrated low threshold current of 0.65 mA at 25°C using nominal 7.3 μm oxide-aperture GenX VCSELs. They can be directly modulated up to 25 Gb/s with open eyes at 6 mA bias. With the same design, open eyes of 20 Gb/s is achieved at bias current as low as 4 mA (9 KA/cm²) at 25°C and 8 mA (18 KA/cm²) at 70°C. These operation conditions are comparable to current 10 Gb/s GenX VCSELs in production which have been shown a great field history.

Citation Download Citation

Neinyi Li, Chuan Xie, Chun Lei, Wenlin Luo, Xinyu Sun, Daniel Kuchta, Clint Schow, and Fuad Doany "Development of high-speed VCSELs beyond 10 Gb/s at Emcore", Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150O (5 February 2010); https://doi.org/10.1117/12.845396

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