High-operating-temperature MWIR photon detectors based on type II InAs/GaSb superlattice

Manijeh Razeghi; Binh-Minh Nguyen; Pierre-Yves Delaunay; Siamak Abdollahi Pour; Edward Kwei-wei Huang; Paritosh Manukar; Simeon Bogdanov; Guanxi Chen

doi:10.1117/12.840422

22 January 2010 High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice

Manijeh Razeghi, Binh-Minh Nguyen, Pierre-Yves Delaunay, Siamak Abdollahi Pour, Edward Kwei-wei Huang, Paritosh Manukar, Simeon Bogdanov, Guanxi Chen

Author Affiliations +

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76081Q (2010) https://doi.org/10.1117/12.840422
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (10⁶ Ohm.cm²) and a detectivity of 3x10¹³cm.Hz^1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.

Citation Download Citation

Manijeh Razeghi, Binh-Minh Nguyen, Pierre-Yves Delaunay, Siamak Abdollahi Pour, Edward Kwei-wei Huang, Paritosh Manukar, Simeon Bogdanov, and Guanxi Chen "High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Q (22 January 2010); https://doi.org/10.1117/12.840422

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