High operating temperature MWIR detectors

H. F. Schaake; M. A. Kinch; D. Chandra; P. K. Liao; D. F. Weirauch; C.-F. Wan; H. D. Shih

doi:10.1117/12.846254

22 January 2010 High operating temperature MWIR detectors

H. F. Schaake, M. A. Kinch, D. Chandra, P. K. Liao, D. F. Weirauch, C.-F. Wan, H. D. Shih

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76081O (2010) https://doi.org/10.1117/12.846254
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

The High Operating Temperature Auger suppressed infrared detector concept is being pursued using the high density vertically integrated photodiode (HDVIP®) architecture and an n⁺-p device structure. Dark current densities as low as 2.5 mA/cm² normalized to a 5 μm cutoff at 250K have been demonstrated on these diodes. These dark currents imply minority carrier lifetimes in excess of 300μsec. 1/f noise in these devices arises from the tunneling of charge into the passivation interface, giving rise to a modulation in the surface positive charge and hence to the width of the depletion region in the p-side of the device and a modulation in the total dark current. The measured 1/f noise is in agreement with the predictions of this model, with very low noise being observed when the lifetimes are high.

Citation Download Citation

H. F. Schaake, M. A. Kinch, D. Chandra, P. K. Liao, D. F. Weirauch, C.-F. Wan, and H. D. Shih "High operating temperature MWIR detectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081O (22 January 2010); https://doi.org/10.1117/12.846254

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