Recent developments on non-polar cubic group III nitrides for optoelectronic applications

D. J. As

doi:10.1117/12.846846

22 January 2010 Recent developments on non-polar cubic group III nitrides for optoelectronic applications

D. J. As

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76080G (2010) https://doi.org/10.1117/12.846846
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Molecular Beam epitaxy (MBE) of cubic group III-nitrides is a direct way to eliminate polarization effects which inherently limit the performance of optoelectronic devices containing quantum well or quantum dot active regions. In this contribution the latest achievement in the MBE of phase-pure cubic GaN, InN, AlN and their alloys will be reviewed. A new RHEED control technique enables to carefully adjust stoichiometry and to severely reduce the surface roughness, which is important for any hetero-interface. The structural, optical and electrical properties of cubic nitrides and AlGaN/GaN will be presented. We show that no polarization field exists in cubic nitrides and demonstrate intersubband absorption at 1.55 μm in cubic AlN/GaN superlattices. Further the progress towards the fabrication of cubic GaN/AlGaN superlattices for terahertz applications will be discussed.

Citation Download Citation

D. J. As "Recent developments on non-polar cubic group III nitrides for optoelectronic applications", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76080G (22 January 2010); https://doi.org/10.1117/12.846846

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