Comparison of different template structures for high quality and self-separation thick GaN growth

Yen-Hsiang Fang; Chu-Li Chao; Tung-Wei Chi; Kuei-Ming Chen; Po-Chun Liu; Jenq-Dar Tsay

doi:10.1117/12.846513

16 March 2010 Comparison of different template structures for high quality and self-separation thick GaN growth

Yen-Hsiang Fang, Chu-Li Chao, Tung-Wei Chi, Kuei-Ming Chen, Po-Chun Liu, Jenq-Dar Tsay

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760221 (2010) https://doi.org/10.1117/12.846513
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Two different template structures of dot air-bridges and nanorods were used for 300 µm GaN growth by hydride vapor phase epitaxy (HVPE). The selective growth of arrays of dot air-bridges and nanorods whose sidewalls coated with SiO₂ are identified and exploited to form a compliant layer to decouple the impact due to the different thermal expansion and lattice mismatch between 300 µm overgrown GaN layer and the host sapphire substrate. As the process temperature cooling down from 1050 °C to room temperature in HVPE system, the 300 μm freestanding GaN substrates were obtained by the self-separation. The dislocation density was estimated by both the etching pit density method and cathodoluminescence (CL). The dislocation densities of the freestanding bulk GaN were lower than 5×10⁶ and 5×10⁷ cm^-2 for the template structure of dot air-bridges and nanorods structure, respectively.

Citation Download Citation

Yen-Hsiang Fang, Chu-Li Chao, Tung-Wei Chi, Kuei-Ming Chen, Po-Chun Liu, and Jenq-Dar Tsay "Comparison of different template structures for high quality and self-separation thick GaN growth", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760221 (16 March 2010); https://doi.org/10.1117/12.846513

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