Paper
1 March 2010 Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells observed by transient THz spectroscopy
D. Turchinovich, H. P. Porte, D. G. Cooke, P. Uhd Jepsen
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Abstract
We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.
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D. Turchinovich, H. P. Porte, D. G. Cooke, and P. Uhd Jepsen "Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells observed by transient THz spectroscopy", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001W (1 March 2010); https://doi.org/10.1117/12.839847
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KEYWORDS
Quantum wells

Terahertz radiation

Ultrafast laser spectroscopy

Gallium nitride

Spectroscopy

Luminescence

Carrier dynamics

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