Extreme THz nonlinearities in bulk and nanostructured semiconductors

A. Sell; A. A. Anappara; T. Kampfrath; K. von Volkmann; M. Wolf; J. T. Steiner; M, Kira; S. W. Koch; G. Biasiol; L. Sorba; A. Tredicucci; A. Leitenstorfer; R. Huber

doi:10.1117/12.840959

1 March 2010 Extreme THz nonlinearities in bulk and nanostructured semiconductors

A. Sell, A. A. Anappara, T. Kampfrath, K. von Volkmann, M. Wolf, J. T. Steiner, M, Kira, S. W. Koch, G. Biasiol, L. Sorba, A. Tredicucci, A. Leitenstorfer, R. Huber

Author Affiliations +

Proceedings Volume 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV; 76001S (2010) https://doi.org/10.1117/12.840959
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Phase-locked electromagnetic transients in the terahertz (THz) spectral domain have become a unique contact-free probe of the femtosecond dynamics of low-energy excitations in semiconductors. Access to their nonlinear response, however, has been limited by a shortage of sufficiently intense THz emitters. Here we introduce a novel high-field source for THz transients featuring peak amplitudes of up to 108 MV/cm. This facility allows us to explore the non-perturbative response of semiconductors to intense fields tailored with sub-cycle precision. In a first experiment intense transients drive Rabi-oscillations between excitonic states in Cu₂O, implying exciting perspectives for future THz quantum optics. At electric fields beyond 10 MV/cm, we observe the breakdown of the power expansion of the nonlinear polarization in bulk semiconductors. Furthermore, we employ the intense magnetic field components of our transients to coherently control spin waves in antiferromagnetically ordered solids. Finally, intersubband cavity polaritons in semiconductor microcavities are exploited to push light-matter coupling to an unprecedented ultrastrong and sub-cycle regime.

Citation Download Citation

A. Sell, A. A. Anappara, T. Kampfrath, K. von Volkmann, M. Wolf, J. T. Steiner, M, Kira, S. W. Koch, G. Biasiol, L. Sorba, A. Tredicucci, A. Leitenstorfer, and R. Huber "Extreme THz nonlinearities in bulk and nanostructured semiconductors", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001S (1 March 2010); https://doi.org/10.1117/12.840959

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available