High-power high-brightness 808nm QCW laser diode mini bars

Hua Huang; Jun Wang; Mark DeVito; Ling Bao; Aaron Hodges; Shiguo Zhang; Damian Wise; Mike Grimshaw; Dapeng Xu; Chendong Bai

doi:10.1117/12.842859

17 February 2010 High-power high-brightness 808nm QCW laser diode mini bars

Hua Huang, Jun Wang, Mark DeVito, Ling Bao, Aaron Hodges, Shiguo Zhang, Damian Wise, Mike Grimshaw, Dapeng Xu, Chendong Bai

Author Affiliations +

Proceedings Volume 7583, High-Power Diode Laser Technology and Applications VIII; 75831A (2010) https://doi.org/10.1117/12.842859
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

A new class of high power high brightness 808 nm QCW laser diode mini bars has been developed. With nLight's nXLT facet passivation technology and improvements in epitaxial structure, mini bars of 3 mm bar width with high efficiency design have tested to over 280 W peak power with peak efficiency over 64% on conduction cooled CS packages, equivalent to output power density near 130 mW/μm. These mini laser bars open up new applications as compact, portable, and low current pump sources. Liftests have been carried out on conduction cooled CS packages and on QCW stacks. Over 370 million (M) shots lifetest with high efficiency design has been demonstrated on CS so far without failure, and over 80 M shots on QCW stacks with accelerated stress lifetest have also proven high reliability on mini bars with high temperature design. Failure analysis determined that the failure mechanism was related to bulk defects, showing that mini laser bars are not prone to facet failure, which is consistent with the large current pulse test and failure analysis on high power single emitters.

Citation Download Citation

Hua Huang, Jun Wang, Mark DeVito, Ling Bao, Aaron Hodges, Shiguo Zhang, Damian Wise, Mike Grimshaw, Dapeng Xu, and Chendong Bai "High-power high-brightness 808nm QCW laser diode mini bars", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75831A (17 February 2010); https://doi.org/10.1117/12.842859

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available