NDE methods for determining the materials properties of silicon carbide plates

Shant Kenderian; Yong Kim; Eric Johnson; Iwona A. Palusinski

doi:10.1117/12.824885

21 August 2009 NDE methods for determining the materials properties of silicon carbide plates

Shant Kenderian, Yong Kim, Eric Johnson, Iwona A. Palusinski

Proceedings Volume 7425, Optical Materials and Structures Technologies IV; 742507 (2009) https://doi.org/10.1117/12.824885
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

Two types of SiC plates, differing in their manufacturing processes, were interrogated using a variety of NDE techniques. The task of evaluating the materials properties of these plates was a challenge due to their non-uniform thickness. Ultrasound was used to estimate the Young's Modulus and calculate the thickness profile and Poisson's Ratio of the plates. The Young's Modulus profile plots were consistent with the thickness profile plots, indicating that the technique was highly influenced by the non-uniform thickness of the plates. The Poisson's Ratio is calculated from the longitudinal and shear wave velocities. Because the thickness is cancelled out, the result is dependent only on the time of flight of the two wave modes, which can be measured accurately. X-Ray was used to determine if any density variations were present in the plates. None were detected suggesting that the varying time of flight of the acoustic wave is attributed only to variations in the elastic constants and thickness profiles of the plates. Eddy Current was used to plot the conductivity profile. Surprisingly, the conductivity profile of one type of plates varied over a wide range rarely seen in other materials. The other type revealed a uniform conductivity profile.

Citation Download Citation

Shant Kenderian, Yong Kim, Eric Johnson, and Iwona A. Palusinski "NDE methods for determining the materials properties of silicon carbide plates", Proc. SPIE 7425, Optical Materials and Structures Technologies IV, 742507 (21 August 2009); https://doi.org/10.1117/12.824885

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