Quasi one-dimensional transport in doped PBTTT and PBTTT thin film transistors

Jonathan D. Yuen; Reghu Menon; Nelson E. Coates; Ebinazar B. Namdas; Shinuk Cho; Scott T. Hannahs; Daniel Moses; Alan J. Heeger

doi:10.1117/12.825695

20 August 2009 Quasi one-dimensional transport in doped PBTTT and PBTTT thin film transistors

Jonathan D. Yuen, Reghu Menon, Nelson E. Coates, Ebinazar B. Namdas, Shinuk Cho, Scott T. Hannahs, Daniel Moses, Alan J. Heeger

Author Affiliations +

Proceedings Volume 7417, Organic Field-Effect Transistors VIII; 74171A (2009) https://doi.org/10.1117/12.825695
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large area electronics such as flat panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high performance field effect transistors (FETs), beginning with mobilities around 10^-5cm²/Vs to a recent report of 1cm²/Vs for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno [3,2-b]thiophene) (PBTTT). In this work, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger Liquid description of the onedimensional "metal", where fermions along the 1D chain collectively behave as bosons, and where charge and spin are decoupled.

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Jonathan D. Yuen, Reghu Menon, Nelson E. Coates, Ebinazar B. Namdas, Shinuk Cho, Scott T. Hannahs, Daniel Moses, and Alan J. Heeger "Quasi one-dimensional transport in doped PBTTT and PBTTT thin film transistors", Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74171A (20 August 2009); https://doi.org/10.1117/12.825695

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