Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

James M. Ball; Paul H. Wöbkenberg; Florian Colléaux; Jeremy Smith; Donal D. C. Bradley; Thomas D. Anthopoulos

doi:10.1117/12.825339

20 August 2009 Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

James M. Ball, Paul H. Wöbkenberg, Florian Colléaux, Jeremy Smith, Donal D. C. Bradley, Thomas D. Anthopoulos

Proceedings Volume 7417, Organic Field-Effect Transistors VIII; 741711 (2009) https://doi.org/10.1117/12.825339
Event: SPIE Photonic Devices + Applications, 2009, San Diego, California, United States

Abstract

Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ~1 μF/cm² when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm²/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.

Citation Download Citation

James M. Ball, Paul H. Wöbkenberg, Florian Colléaux, Jeremy Smith, Donal D. C. Bradley, and Thomas D. Anthopoulos "Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics", Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 741711 (20 August 2009); https://doi.org/10.1117/12.825339

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