Paper
24 August 2009 193 nm angle-resolved scatterfield microscope for semiconductor metrology
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Abstract
An angle-resolved scatterfield microscope (ARSM) featuring 193 nm excimer laser light was developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and telecentric conjugate back focal plane (CBFP) and a scan module for resolving Köhler illumination in the sample plane. Angular scanning of the sample plane was achieved by linearly scanning an aperture across the 12 mm diameter CBFP, with aperture size as small as 0.4 mm for some scans. For each aperture, the sample was illuminated over a range of angles from 12° to 48°, corresponding to a numerical aperture of 0.2 to 0.74. Angleresolved measurement results are presented for grating targets with nominal linewidths down to 50 nm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeung Joon Sohn, Richard Quintanilha, Bryan M. Barnes, and Richard M. Silver "193 nm angle-resolved scatterfield microscope for semiconductor metrology", Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050R (24 August 2009); https://doi.org/10.1117/12.830683
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Cited by 10 scholarly publications and 1 patent.
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KEYWORDS
Microscopes

Metrology

Microscopy

Overlay metrology

Diffraction gratings

Objectives

Semiconductors

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