Paper
24 August 2009 Analysis of the nano-deformation fields of micro-crack in silicon by high-resolution transmission electron microscopy
Q. Gu, C. W. Zhao, H. Q. Jing, Y. M. Xing
Author Affiliations +
Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73750C (2009) https://doi.org/10.1117/12.839015
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China
Abstract
A nanoscale experimental study of micro-crack in silicon was presented by using a combination of high-resolution transmission electron microscopy and geometric phase analysis. The results show that there is an amorphous phase content in the crack body. The width of the amorphous narrow band which exists within the crack body is 2nm approximately. The geometric phase analysis technology was applied to calculate the strain fields of the crack tip. The trend of the experiment strain value ahead of the crack tip is the same with the trend of the isotropic elastic theory strain value.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Q. Gu, C. W. Zhao, H. Q. Jing, and Y. M. Xing "Analysis of the nano-deformation fields of micro-crack in silicon by high-resolution transmission electron microscopy", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73750C (24 August 2009); https://doi.org/10.1117/12.839015
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KEYWORDS
Crystals

Transmission electron microscopy

Silicon

Image transmission

Image analysis

Digital image processing

Software development

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