Development history of HgCdTe infrared detectors in Japan

Hironori Nishino; Naoki Oda

doi:10.1117/12.817404

6 May 2009 Development history of HgCdTe infrared detectors in Japan

Hironori Nishino, Naoki Oda

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72982X (2009) https://doi.org/10.1117/12.817404
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

The authors summarize the past 40-years history on the development of HgCdTe infrared detectors in Japan. At the early stage of development of material growth, high-quality HgCdTe layers were obtained by liquid phase epitaxy technique, owing to lattice-matched CdZnTe substrates. Hetero-epitaxial growth techniques of HgCdTe were also successfully developed to obtain epilayers on much larger and cheaper substrates such as GaAs and Si, using methods of metal-organic chemical vapor deposition and molecular beam epitaxy, where key issues were controlling surface orientation, surface polarity and so forth. Fabrication process of p-on-n junction photodiodes was developed with various improvements on ion implantation and surface passivation. On the basis of technologies mentioned above, large-scale infrared focal plane arrays were realized with superior thermal images.

Citation Download Citation

Hironori Nishino and Naoki Oda "Development history of HgCdTe infrared detectors in Japan", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982X (6 May 2009); https://doi.org/10.1117/12.817404

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