Effect of substrate bias and arc current on AlN films

Haifeng Liang; Hengping Liu; Yang Zhou

doi:10.1117/12.830872

20 May 2009 Effect of substrate bias and arc current on AlN films

Haifeng Liang, Hengping Liu, Yang Zhou

Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72821G (2009) https://doi.org/10.1117/12.830872
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China

Abstract

Aluminum nitride (AlN) thin films are deposited by means of d.c. magnetism filter arc deposition. Various processing parameters, such as 0-V, -50V, -100V, -150V bias voltage and arc current of 55A, 75A and 90A, are optimized. Ellipsometry, X-ray diffraction (XRD) and fourier transform infra-red (FTIR) are carried out to characterize AlN thin films' properties. For 0-V and -50V bias, AlN films, prepared on silicon substrate, are show with 002 preferred orientation, and the films are oriented to 100 at the -100V bias. However, the films has no preferred orientation when using -150V bias voltage. Furthermore, the films are also shown without preferred orientation at 50A arc current (with -50 bias voltage), and presented obvious preferred orientation at 75A and 90A. In addition, ellipsometry and FTIR spectrum has shown that all the films extinction coefficient are near to zero and refractive index varied from 1.7 to 2.4. The deposition rate increases with the decrease of arc current and decreases with the positive bias voltage. By combining the spectrum of XRD and FTIR, the AlN films with good crystalline orientation, present obvious absorbing peak in To (A1) or To(E1) vibration.

Citation Download Citation

Haifeng Liang, Hengping Liu, and Yang Zhou "Effect of substrate bias and arc current on AlN films", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821G (20 May 2009); https://doi.org/10.1117/12.830872

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