Paper
20 May 2009 Three regions in the material removal rate with the increase of the concentration of abrasives slurry
YinBao Guo, Wei Yang, Qiao Xu, YaGuo Li
Author Affiliations +
Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72820O (2009) https://doi.org/10.1117/12.830806
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
During chemical mechanical planarization polishing (CMP), with the increase of the concentration of abrasives slurry, there are three regions of material removal rate (MRR). It is a noticeable phenomenon for several wafer material, including copper, aluminum, tungsten, silicon and silicon oxide. In this paper, a new abrasion mechanism model in solid-solid contact mode of the CMP, proposed by Luo and David, is revised to explain the three regions and two transitions between these regions. Experiment data from fast polishing process (FPP) supports the prediction of material removal rate regions.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
YinBao Guo, Wei Yang, Qiao Xu, and YaGuo Li "Three regions in the material removal rate with the increase of the concentration of abrasives slurry", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72820O (20 May 2009); https://doi.org/10.1117/12.830806
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KEYWORDS
Abrasives

Chemical mechanical planarization

Semiconducting wafers

Polishing

Silicon

Surface finishing

Copper

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