Paper
19 February 2009 Enhanced light-extraction in GaN light-emitting diode with binary blazed grating reflector
Wenhua Wu, Huaming Wu, Tingwei Wu, Yi Wang, Zhiping Zhou
Author Affiliations +
Abstract
Enhancement of light extraction in a GaN light-emitting diode (LED) employing a binary blazed grating reflector (BBGR) is presented. The BBGR consists of asymmetrically periodic structure etched on the GaN layer. Rigorous coupled-wave analysis (RCWA) is adopted to calculate the reflectivity of the BBGR, which shows that it has the characteristics of broadband reflection spectrum and very high reflectivity. The result of high angle-averaged reflectivity up to 94% from 300nm to 450nm predicts the potential enhancement of light-extraction efficiency of GaN LEDs with BBGR.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenhua Wu, Huaming Wu, Tingwei Wu, Yi Wang, and Zhiping Zhou "Enhanced light-extraction in GaN light-emitting diode with binary blazed grating reflector", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790O (19 February 2009); https://doi.org/10.1117/12.821171
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Light emitting diodes

Gallium nitride

Reflectors

Binary data

Diffraction gratings

Mirrors

Back to Top