New approach to determine best beam focus

Christian Zuniga; Tamer M. Tawfik

doi:10.1117/12.814015

16 March 2009 New approach to determine best beam focus

Christian Zuniga, Tamer M. Tawfik

Proceedings Volume 7274, Optical Microlithography XXII; 72742S (2009) https://doi.org/10.1117/12.814015
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

As patterning technology advances beyond 45-nm half-pitch, the process window shrinks dramatically even with advanced resolution enhancement techniques. Beamfocus represents one of the process parameters that has a significant contribution to the overall critical feature dimension error budget. In building an optical model for proximity correction, the final model quality strongly depends on matching the focus used in the simulation to the experimental focus conditions. In this paper, we present a new method to determine the best beamfocus and verify its accuracy using actual test pattern measurements.

Citation Download Citation

Christian Zuniga and Tamer M. Tawfik "New approach to determine best beam focus", Proc. SPIE 7274, Optical Microlithography XXII, 72742S (16 March 2009); https://doi.org/10.1117/12.814015

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