Integration of dry etching steps for double patterning and spacer patterning processes

S. Barnola; C. Lapeyre; I. Servin; C. Arvet; P. Maury; L. Mage

doi:10.1117/12.814856

16 March 2009 Integration of dry etching steps for double patterning and spacer patterning processes

S. Barnola, C. Lapeyre, I. Servin, C. Arvet, P. Maury, L. Mage

Proceedings Volume 7274, Optical Microlithography XXII; 72741X (2009) https://doi.org/10.1117/12.814856
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Double patterning (DP) is today the accepted solution to extend immersion lithography to the 32 nm node and beyond. Pitch splitting process and spacer process have been developed at CEA-LETI-Minatec. This paper will focus on the optimization of dry etching process to achieve these two patterning techniques. For each approach, we first discuss the choices of the starting integration flows based on the requirements to etch the final devices. Then, we develop how the etching steps were optimized to get a good step by step CD control for 45nm/45nm features.

Citation Download Citation

S. Barnola, C. Lapeyre, I. Servin, C. Arvet, P. Maury, and L. Mage "Integration of dry etching steps for double patterning and spacer patterning processes", Proc. SPIE 7274, Optical Microlithography XXII, 72741X (16 March 2009); https://doi.org/10.1117/12.814856

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