Pattern transfer process development for EUVL

Daisuke Kawamura; Yuusuke Tanaka; Toshiro Itani; Eiichi Soda; Noriaki Oda

doi:10.1117/12.812928

1 April 2009 Pattern transfer process development for EUVL

Daisuke Kawamura, Yuusuke Tanaka, Toshiro Itani, Eiichi Soda, Noriaki Oda

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731O (2009) https://doi.org/10.1117/12.812928
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Test chip manufacturing is an ongoing program at Selete in order to evaluate all elements of extreme ultraviolet lithography (EUVL) such as mask, source, exposure tool, flare compensation, resist material, and pattern transfer processes. One such test chip represents a back end of process - test elements group (BEP-TEG) which is a dual damascene process with an overlay of 35nm-half pitch (hp). Pattern transfer process development for the BEP-TEG manufacturing is investigated. The multi-stack films for pattern transfer are coated films only. The main items for evaluation were resist thickness, necessity of bottom anti-refracting coat (BARC) between resist film and spin on glass (SOG) film, and the BARC material itself and its thickness. The BARC material was evaluated from the stand points of outgassing, etching rate, resist pattern collapse, and resist pattern profiles. Working with resultant multi-stack films, 35nm-hp dense line patterns and 70nm-pitch dense contact-hole patterns were successfully transferred to low-k film.

Citation Download Citation

Daisuke Kawamura, Yuusuke Tanaka, Toshiro Itani, Eiichi Soda, and Noriaki Oda "Pattern transfer process development for EUVL", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731O (1 April 2009); https://doi.org/10.1117/12.812928

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