Paper
1 April 2009 Analysis of the effect of point-of-use filtration on microbridging defectivity
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Abstract
Microbridging defects have emerged as one of the top yield detractor in semiconductor manufacturing as Moore's law drives towards 32nm processing utilizing immersion lithography. It is generally recognized that there are multiple root causes for microbridging defectivity. Image and resist contrast and different developer techniques have been studied and their contribution to microbridging defectivity has been described. In this study we will focus on the effect of point-ofuse filtration and how it is best used to mitigate microbridging defectivity. A design of experiment methodology will be utilized to understand the effect of various filter and filtration parameters on microbridging defectivity, including filter retention rating, filter media and design, filtration rate, and controlled filtration pressure. It is anticipated that by better understanding the effect of point-of-use filtration on microbridging defectivity, guidelines for better control of this type of defect may be formulated.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Braggin, R. Gronheid, S. Cheng, D. Van Den Heuvel, S. Bernard, P. Foubert, and C. Rosslee "Analysis of the effect of point-of-use filtration on microbridging defectivity", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730S (1 April 2009); https://doi.org/10.1117/12.813471
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Chemistry

Semiconducting wafers

Inspection

Immersion lithography

Scanning electron microscopy

Intelligence systems

Manufacturing

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