Designing phonons for active use in terahertz devices

H. C. Liu; C. Y. Song; Z. R Wasilewski; J. A. Gupta; M. Buchanan

doi:10.1117/12.807532

26 January 2009 Designing phonons for active use in terahertz devices

H. C. Liu, C. Y. Song, Z. R Wasilewski, J. A. Gupta, M. Buchanan

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220X (2009) https://doi.org/10.1117/12.807532
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Semiconductor nanostructures, such as quantum wells and quantum dots, are well known, and some have been incorporated in applications. Here we propose a new general approach to make use of polar optical phonons in quantum wells for terahertz (THz) devices. As the first example, we show the coupling of phonon and intersubband transition leading to Fano resonance in photocurrent spectra. We investigate the phenomenon experimentally in specially designed GaAs/AlGaAs quantum well infrared photodetectors. Finally, we discuss the future research and potentials.

Citation Download Citation

H. C. Liu, C. Y. Song, Z. R Wasilewski, J. A. Gupta, and M. Buchanan "Designing phonons for active use in terahertz devices", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220X (26 January 2009); https://doi.org/10.1117/12.807532

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available