A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers

Joachim Wagner; Benno Rösener; Nicola Schulz; Marcel Rattunde; Rüdiger Moser; Christian Manz; Klaus Köhler

doi:10.1117/12.807922

26 January 2009 A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers

Joachim Wagner, Benno Rösener, Nicola Schulz, Marcel Rattunde, Rüdiger Moser, Christian Manz, Klaus Köhler

Author Affiliations +

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220E (2009) https://doi.org/10.1117/12.807922
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity surface emitting lasers (VECSELs, also referred to as optically pumped semiconductor disk lasers - OPSDLs) is presented. The concept is based on Ga_xIn_1-xAs_ySb_1-y type-I quantum wells (QWs) embedded between AlAs_0.08Sb_0.92 barrier layers designed for optical in-well pumping where the pump absorption at pump wavelengths between 1 μm and 2 μm takes place exclusively in the active QWs. This concept provides several advantages such as a high modal gain, the suppression of thermal leakage currents, and an improved thermal conductivity of the active region compared to a conventional GaInAsSb/AlGaAsSb active region design. Using the novel design approach an in-well pumped VECSEL emitting at 2.24 μm has been realized, yielding at a heat sink temperature of 20°C in continuous-wave operation a power slope efficiency of more than 32% and an absorption of the 1.96 μm pump light of more than 50% without pump recycling, These data constitute a significant improvement in device performance compared to previously reported data on in-well pumped GaSb-based VECSELs.

Citation Download Citation

Joachim Wagner, Benno Rösener, Nicola Schulz, Marcel Rattunde, Rüdiger Moser, Christian Manz, and Klaus Köhler "A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220E (26 January 2009); https://doi.org/10.1117/12.807922

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