Fringing field effects in semiconductor nanowire double heterostructures

Jun Hu; Yang Liu; Cun-Zheng Ning; Robert Dutton; Sung-Mo Kang

doi:10.1117/12.809320

24 February 2009 Fringing field effects in semiconductor nanowire double heterostructures

Jun Hu, Yang Liu, Cun-Zheng Ning, Robert Dutton, Sung-Mo Kang

Proceedings Volume 7211, Physics and Simulation of Optoelectronic Devices XVII; 72110Q (2009) https://doi.org/10.1117/12.809320
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al_0.2Ga_0.8N/GaN DH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

Citation Download Citation

Jun Hu, Yang Liu, Cun-Zheng Ning, Robert Dutton, and Sung-Mo Kang "Fringing field effects in semiconductor nanowire double heterostructures", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Q (24 February 2009); https://doi.org/10.1117/12.809320

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