Paper
18 November 2008 Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI
Liu Liu, Joris Van Campenhout, Günther Roelkens, Richard Soref, Dries Van Thourhout, Pedro Rojo-Romeo, Philippe Regreny, Christian Seassal, Jean-Marc Fédéli, Roel Baets
Author Affiliations +
Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351I (2008) https://doi.org/10.1117/12.803085
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
A compact electro-optic modulator on silicon-on-insulator is presented. The structure consists of a III-V microdisk cavity heterogeneously integrated on a silicon-on-insulator wire waveguide. By modulating the loss of the active layer included in the cavity through carrier injection, the power of the transmitted light at the resonant wavelength is modulated. ~10 dB extinction ratio and 2.73 Gbps dynamic operation are demonstrated without using any special driving techniques. The results are consistent with the theoretical simulations.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liu Liu, Joris Van Campenhout, Günther Roelkens, Richard Soref, Dries Van Thourhout, Pedro Rojo-Romeo, Philippe Regreny, Christian Seassal, Jean-Marc Fédéli, and Roel Baets "Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351I (18 November 2008); https://doi.org/10.1117/12.803085
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KEYWORDS
Modulation

Waveguides

Silicon

Modulators

Electrooptic modulators

Optical modulators

Thermal optics

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