Investigation of the double threshold effect of ultraviolet-laser-induced preferential domain nucleation in near stoichiometric LiTaO3

Ya'nan Zhi; De'an Liu; Aimin Yan; Jianfeng Sun; Yu Zhou; Zhu Luan; Yin Hang; Liren Liu

doi:10.1117/12.793962

25 August 2008 Investigation of the double threshold effect of ultraviolet-laser-induced preferential domain nucleation in near stoichiometric LiTaO₃

Ya'nan Zhi, De'an Liu, Aimin Yan, Jianfeng Sun, Yu Zhou, Zhu Luan, Yin Hang, Liren Liu

Author Affiliations +

Proceedings Volume 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II; 705618 (2008) https://doi.org/10.1117/12.793962
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

The double threshold effect of ultraviolet laser-induced preferential domain nucleation in near stoichiometric LiTaO₃ is observed. The continuous ultraviolet laser beam (351 nm) is focused on the -z surface of the wafer, and the homogeneous electric field is applied simultaneously antiparallel to the direction of spontaneous polarization along the z axis. The double threshold effect includes both the primary and the secondary thresholds. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. Below the dark nucleation field, the instantaneous preferential domain nucleation is achieved within the illuminated area when the intensity exceeds the primary threshold. The experiments prove that the domain inversion can be locally controlled by the laser irradiation. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The memory effect of preferential nucleation is observed when the intensity is below the primary threshold and above the secondary threshold. The preferential domain nucleation of memory effect is investigated. The different physical explanations are presented for the instantaneous effect and memory effect. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect.

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Ya'nan Zhi, De'an Liu, Aimin Yan, Jianfeng Sun, Yu Zhou, Zhu Luan, Yin Hang, and Liren Liu "Investigation of the double threshold effect of ultraviolet-laser-induced preferential domain nucleation in near stoichiometric LiTaO₃", Proc. SPIE 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II, 705618 (25 August 2008); https://doi.org/10.1117/12.793962

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