Paper
28 August 2008 Ultra-high resolution Raman imaging by optically trapped dielectric microsphere
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Abstract
We show a different approach to perform near-field Raman imaging with sub-diffraction limit spatial resolution. In this approach, a dielectric microsphere is trapped by the excitation laser through optical tweezers technique. The microsphere is used to focus the laser to the sample, and also to collect the scattered Raman signals. We show the capability of this method in imaging various types of samples, such as device sample with 45 nm poly-Si gates with SiGe stressors and gold nanopatterns. This method is easy to perform, has better repeatability, and generates stronger signal as compared to the conventional near-field Raman techniques.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. X. Shen and Johnson Kasim "Ultra-high resolution Raman imaging by optically trapped dielectric microsphere", Proc. SPIE 7033, Plasmonics: Nanoimaging, Nanofabrication, and Their Applications IV, 70330E (28 August 2008); https://doi.org/10.1117/12.794692
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KEYWORDS
Raman spectroscopy

Near field

Silicon

Gold

Nanostructures

Dielectrics

Optical tweezers

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