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The eight-channel thin-film resistive sensor of atomic hydrogen which in the automated mode allows to measure
hydrogen atoms flow density in atomic-molecular mix in conditions of the low gas pressure (10-2-10-4 Pa) and under
action of infra-red and visible radiation noises is described. The sensor can be used for measurement of AH flow density
distribution on the large cross-section beam, including measurement during GaAs surface cleaning. The measurement
range of atoms flow density is 5×1013-1016 at.cm-2s-1 and measurement time is 1-10 minutes. The resistor of the sensor is
produced by microelectronics planar technology that provides an opportunity of the high space resolution at beam spatial
distributions measurement.
V. A. Kagadei,E. V. Nefyodtsev,D. I. Proskurovski, andS. V. Romanenko
"Measurement of atomic hydrogen flow density during GaAs surface cleaning", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); https://doi.org/10.1117/12.802357
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V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovski, S. V. Romanenko, "Measurement of atomic hydrogen flow density during GaAs surface cleaning," Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); https://doi.org/10.1117/12.802357