Paper
14 May 2008 Novel design of Z-cut lithium niobate electrooptic modulator
Author Affiliations +
Abstract
Analysis and optimisation of ultra-high-speed Z-cut lithium niobate (LN) electrooptic modulator, operating at a high frequency region, by using full wave finite element numerical technique has been demonstrated. Investigation of the effects of adjusting the buffer layer thickness, the electrode height and the waveguide trapezoidal profile on the microwave effective index (Nm), the characteristic impedance (Ζc), the microwave losses (αc) and the half-wave voltage-length product (VπL) has been reported. Optimisation of the above parameters yield to a novel design of LN modulator with a low VπL and high bandwidth operating at a frequency range between 1-100 GHz. The frequency dependent dispersion of the key device parameters with aim to determine the device suitability for high speed operation has been demonstrated.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Gorman and S. Haxha "Novel design of Z-cut lithium niobate electrooptic modulator", Proc. SPIE 6992, Micro-Optics 2008, 699219 (14 May 2008); https://doi.org/10.1117/12.781399
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KEYWORDS
Waveguides

Modulators

Electrodes

Microwave radiation

Lithium niobate

Electrooptic modulators

Signal attenuation

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