Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao; Hiroshi Kanno; Taizoh Sadoh

doi:10.1117/12.792280

11 March 2008 Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840L (2008) https://doi.org/10.1117/12.792280
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si_1-XGe_X (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

Citation Download Citation

Masanobu Miyao, Hiroshi Kanno, and Taizoh Sadoh "Electric field assisted low-temperature growth of SiGe on insulating films for future TFT", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840L (11 March 2008); https://doi.org/10.1117/12.792280

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