Paper
2 May 2008 Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices
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Abstract
In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Darin Hoffman, Binh-Minh Nguyen, Pierre-Yves Delaunay, Edward Kwei-wei Huang, and Meimei Z. Tidrow "Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694009 (2 May 2008); https://doi.org/10.1117/12.782854
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum efficiency

Superlattices

Long wavelength infrared

Gallium antimonide

Sensors

Diffusion

Diodes

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