Paper
26 March 2008 Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and bio-sensing applications
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Abstract
Current transport in carbon nanotube field effect transistors (CNT-FETs) has been modeled from charge distributions and the potential inside the carbon nanotube. Analytical equations describing I-V characteristics of the CNT-FETs have been obtained from the combination of diffusion and drift mechanisms in the channel region for normal and sub-threshold operations. It is shown that the electronic transport in semiconducting single-walled carbon nanotubes and field effect transistors can provide better understanding of their bio- and chemical sensing for the detection of traces of agents at molecular levels.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose M. Marulanda, Ashok Srivastava, and Ashwani K. Sharma "Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and bio-sensing applications", Proc. SPIE 6931, Nanosensors and Microsensors for Bio-Systems 2008, 693108 (26 March 2008); https://doi.org/10.1117/12.775181
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Cited by 4 scholarly publications.
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KEYWORDS
Carbon nanotubes

Single walled carbon nanotubes

Sensors

Field effect transistors

Biosensing

Gold

Oxides

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