An efficient and robust mask model for lithography simulation

Zhenhai Zhu; Frank Schmidt

doi:10.1117/12.772987

7 March 2008 An efficient and robust mask model for lithography simulation

Zhenhai Zhu, Frank Schmidt

Proceedings Volume 6924, Optical Microlithography XXI; 69243I (2008) https://doi.org/10.1117/12.772987
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

We formulate the mask modeling as a parametric model order reduction problem. We then apply a robust reduction technique to generate the compact mask model. Since this model is based on first principle, it naturally includes diffraction, polarization and couplings, important effects that are poorly handled by the modified thin-mask model (MTMM). The model generation involves only a few sampling solves of the governing equation, much fewer than that needed to generate MTMM. Though the model evaluation takes marginally more CPU time than MTMM, the accuracy and the robustness of the new model are based on much more rigorous theoretical foundation.

Citation Download Citation

Zhenhai Zhu and Frank Schmidt "An efficient and robust mask model for lithography simulation", Proc. SPIE 6924, Optical Microlithography XXI, 69243I (7 March 2008); https://doi.org/10.1117/12.772987

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