Double printing through the use of ion implantation

Nandasiri Samarakone; Paul Yick; Mary Zawadzki; Sang-Jun Choi

doi:10.1117/12.774051

7 March 2008 Double printing through the use of ion implantation

Nandasiri Samarakone, Paul Yick, Mary Zawadzki, Sang-Jun Choi

Proceedings Volume 6924, Optical Microlithography XXI; 69242B (2008) https://doi.org/10.1117/12.774051
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Argon ion implantation has been investigated as a means of achieving resist stabilization, such that a second resist layer may be patterned without attacking the 1st layer. The viability of such an approach has been investigated for double printing. Potential benefits include resist feature shrinkage and Line Width Roughness (LWR) improvements. Line shrinkage benefits the lithographic process window as features can be printed larger, while improvements in LWR, is a further valuable attribute. We report on the role played by ion implant dose, its impact on both lateral and vertical resist shrinkage, LWR as well as its impact on organic BARC reflectivity. The performance of such masks during dry etching of a gate layer has been additionally evaluated.

Citation Download Citation

Nandasiri Samarakone, Paul Yick, Mary Zawadzki, and Sang-Jun Choi "Double printing through the use of ion implantation", Proc. SPIE 6924, Optical Microlithography XXI, 69242B (7 March 2008); https://doi.org/10.1117/12.774051

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