Paper
4 April 2008 Ellipsometry studies of the kinetic of deprotection of thin 193 nm positive tone resist film
H. Ridaoui, S. Derrough, C. Sourd, H. Trouve, A. Pikon, J. H. Tortai
Author Affiliations +
Abstract
A new methodology that allows monitoring the deprotection kinetic of UV sensitive thin resist films was recently developed at LTM. This tool measures by ellipsometry changes in optical properties of thin resist films heated at a PEB temperature and exposed to UV. This article presents results of the deprotection kinetic of model resist supplied by Rohm and Haas. Films thicknesses range from 58nm to 150nm. Two thermal protocols were used to check an impact of the film thickness on the deprotection kinetic. The first one is a thermal ramp were temperature increases at a given rate. Prior to this ramp the sample was exposed to UV for 60s with the help of a broadband Xe lamp. This protocol allows detecting the temperature that initiates the deprotection reaction into the film. The second test consists in heating the samples at a fixed temperature for a given time and to expose to UV the film at this temperature. This studies supplies information on the deprotection kinetic occurring in the film at this temperature. The work we did on 193 nm resist films clearly shows that this technique can monitor both the thermal initiation of the deprotection and the real time measurement of the compaction kinetic of the film during the PEB. The initial film thickness impact on the deprotection kinetic is presented in this paper to check whether lithography processes should be adapted to the film thickness.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Ridaoui, S. Derrough, C. Sourd, H. Trouve, A. Pikon, and J. H. Tortai "Ellipsometry studies of the kinetic of deprotection of thin 193 nm positive tone resist film", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692326 (4 April 2008); https://doi.org/10.1117/12.773916
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KEYWORDS
Ultraviolet radiation

Thin films

Lithography

Ellipsometry

Temperature metrology

Lamps

Time metrology

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