Paper
25 March 2008 Implementation of spectroscopic critical dimension (SCD) for leveling inline monitor of ASML 193nm scanner
W. K. Lin, Mike Yeh
Author Affiliations +
Abstract
Gate critical dimension (CD) common window (UDOF) is less than 0.25μm below 110nm-node. It's a serious impact by scanner leveling tilt due to it'll result in defocus, profile changed and then suffer etch bias. Here, we provide an easy and convenient method to monitor daily leveling tilt of ASML 193nm by SCD. Of course, it can also be used for other vendors' scanner including DUV 248nm, 193nm & immersion 193nm. SCD can measure side wall angle (SWA) of photo resist and it's a factor of focus. We can design one mask with SCD grating pattern and layout them at four corners of mask. Collect the SWA data of four corners by different tilt at x and y direction and then we can find the correlation within SWA bias and leveling. It's an easy method to monitor scanner leveling issue and early alert for excursion case.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. K. Lin and Mike Yeh "Implementation of spectroscopic critical dimension (SCD) for leveling inline monitor of ASML 193nm scanner", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223S (25 March 2008); https://doi.org/10.1117/12.773226
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scanners

Single crystal X-ray diffraction

Spectroscopy

Critical dimension metrology

Optical design

Deep ultraviolet

Etching

Back to Top