Development of back-end-of-the-line applications using optical digital profilometry (ODP)

Jun-Ji Huang; J. H. Yeh; Ying Luo; Li Wu; Youxian Wen

doi:10.1117/12.769257

25 March 2008 Development of back-end-of-the-line applications using optical digital profilometry (ODP)

Jun-Ji Huang, J. H. Yeh, Ying Luo, Li Wu, Youxian Wen

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69223K (2008) https://doi.org/10.1117/12.769257
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this paper, a scatterometry software named ODP^(R) by Timbre Technologies was used to develop BEOL applications to measure the trench and complicated dual damascene structures. Diffraction spectra were collected with Nanometrics normal incidence polarized reflectometer system in the wavelength range of 220~800nm. The measured spectra were analyzed and used as target spectra by ODP-PAS^(R) system. Then the associated models were built to generate the simulated spectra which were used to match the measured spectra. We studied four different structures related to the post trench-and-via etch and post copper CMP processes, including two two-dimensional (2D) line\space structures and two three-dimensional (3D) trench-over-via dual damascene structures. Cross-section TEM (transmitted electron microscopy) measurements were performed to evaluate the performance of ODP measurements. The results show that the correlation between TEM and ODP of CD measurements is good, and the correlation between TEM and ODP of the trench depth measurements is also good. ODP is able to measure the trench and complicated dual damascene structures and further to be used to optimize the process conditions.

Citation Download Citation

Jun-Ji Huang, J. H. Yeh, Ying Luo, Li Wu, and Youxian Wen "Development of back-end-of-the-line applications using optical digital profilometry (ODP)", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223K (25 March 2008); https://doi.org/10.1117/12.769257

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