Quantum interference effects in rubidium vapor on a chip

Bin Wu; John Hulbert; Aaron R. Hawkins; Holger Schmidt

doi:10.1117/12.773329

29 January 2008 Quantum interference effects in rubidium vapor on a chip

Bin Wu, John Hulbert, Aaron R. Hawkins, Holger Schmidt

Proceedings Volume 6904, Advances in Slow and Fast Light; 69040E (2008) https://doi.org/10.1117/12.773329
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Harnessing the unique optical quantum interference effects associated with electromagnetically induced transparency (EIT) on a chip promises new opportunities for linear and nonlinear optical devices. Here, we review the status of integrated atomic spectroscopy chips that could replace conventional rubidium spectroscopy cells. Both linear and nonlinear absorption spectroscopy with excellent performance are demonstrated on a chip using a self-contained Rb reservoir and exhibiting a footprint of only 1.5cm x 1cm. In addition, quantum interference effects including V-scheme and Λ-scheme EIT are observed in miniaturized rubidium glass cells whose fabrication is compatible with on-chip integration.

Citation Download Citation

Bin Wu, John Hulbert, Aaron R. Hawkins, and Holger Schmidt "Quantum interference effects in rubidium vapor on a chip", Proc. SPIE 6904, Advances in Slow and Fast Light, 69040E (29 January 2008); https://doi.org/10.1117/12.773329

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