Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Qian Fan; Jacob H. Leach; Mo Wu; Bo Xiao; Xing Gu; Hadis Morkoç; Peter H. Handel

doi:10.1117/12.763688

28 February 2008 Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Qian Fan, Jacob H. Leach, Mo Wu, Bo Xiao, Xing Gu, Hadis Morkoç, Peter H. Handel

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 689426 (2008) https://doi.org/10.1117/12.763688
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report a comparison of various gate dielectrics including SiO₂, Si₃N₄, ZrO₂ and Pb(Zr, Ti)O₃ (PZT) on AlGaN/GaN heterojunction field-effect transistors, deposited by PECVD, MBE, and sputtering respectively. In terms of I-V characteristics, maximum drain-source current could be enhanced under positive gate voltage and the reverse leakage current level decreases by orders of magnitude. In terms of DC measurements, very thin SiO₂ layers can improve performance, which may be due to the passivation effect to remove surface states. No significant difference exists between control and the Si₃N₄and ZrO₂samples. Slightly reduction in transconduction is observed on the sample with PZT probably because of the much thicker layer was utilized. The thickness of insulator layers examined from C-V measurements reveals a better crystal quality can be obtained by PECVD deposition. While the RF S-parameters measurements shows the PZT gate dielectric brings the highest cut-off frequency or the lowest gate capacitance confirmed also by C-V data, which makes it a better candidate for microwave applications.

Citation Download Citation

Qian Fan, Jacob H. Leach, Mo Wu, Bo Xiao, Xing Gu, Hadis Morkoç, and Peter H. Handel "Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689426 (28 February 2008); https://doi.org/10.1117/12.763688

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